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FDMC8854 N-Channel PowerTrench(R) MOSFET
February 2007
FDMC8854 N-Channel Power Trench(R) MOSFET
30V, 15A, 5.7m Features
Max rDS(on) = 5.7m at VGS = 10V, ID = 15A Max rDS(on) = 7.6m at VGS = 4.5V, ID = 13A Low Profile - 1mm max in Power 33 RoHS Compliant
tm
General Description
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor`s advanced Power Trench process. It has been optimized for power management applications.
Application
DC - DC Conversion
Bottom
Top
5
6
7
8 D D D
D
5 6 7
4 3 2 1
4
3
2
1 S S S
G
8
Power 33
MOSFET Maximum Ratings TA = 25C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25C TA = 25C (Note 1a) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 30 20 15 67 15 30 41 2.0 -55 to +150 W C A Units V V
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 60 C/W
Package Marking and Ordering Information
Device Marking FDMC8854 Device FDMC8854 Package Power 33 Reel Size 7'' Tape Width 8mm Quantity 3000 units
(c)2007 Fairchild Semiconductor Corporation FDMC8854 Rev.C
1
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FDMC8854 N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V, VGS = 0V 30 21 1 100 V mV/C A nA
On Characteristics (Note 2)
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 15A VGS = 4.5V, ID = 13A VGS = 10V, ID = 15A, TJ = 125C VDS = 5V, ID = 15A 1 1.9 -6 4.4 5.6 6.6 60 5.7 7.6 9.0 S m 3 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz f = 1MHz 2560 515 290 1.3 3405 685 435 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDD =10V, ID = 15A, VGS = 10V VDD = 10V, ID = 15A VGS = 10V, RGEN = 6 13 5 31 5 41 7 7 23 10 50 10 57 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 15A (Note 2) 0.8 33 28 1.3 50 42 V ns nC IF = 15A, di/dt = 100A/s
Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. b. 135C/W when mounted on a minimum pad of 2 oz copper
a. 60C/W when mounted on a 1 in2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDMC8854 Rev.C
2
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FDMC8854 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
VGS = 10.0V VGS =4.5V VGS = 4.0V
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
180
ID, DRAIN CURRENT (A)
3.0
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
150 120 90 60 30 0 0 1 2
2.5
VGS = 3.5V
2.0
VGS = 4V VGS = 4.5V
VGS = 3.5V
1.5 1.0
VGS = 10.0V
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
0.5 0 30 60 90 120 150 180
ID, DRAIN CURRENT(A)
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
15
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID =15A VGS = 10V
rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m)
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
12
ID =15A
9
TJ = 125oC
6
TJ = 25oC
3
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
2
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On- Resistance vs Junction Temperature
100
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
Figure 4. On-Resistance vs Gate to Source Voltage
100
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
ID, DRAIN CURRENT (A)
80 60 40
TJ = 150oC TJ = 25oC
10 1 0.1
TJ = -55oC TJ = 150oC TJ = 25oC
20
TJ = -55oC
0.01 1E-3 0.0
0 1.5
2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
4.0
0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDMC8854 Rev.C
3
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FDMC8854 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE(V)
10 8 6
VDD =15V ID = 15A VDD = 5V
4000
Ciss
VDD = 10V
CAPACITANCE (pF)
1000
Coss
4 2 0 0 10 20 30 Qg, GATE CHARGE(nC) 40 50
Crss
f = 1MHz VGS = 0V
100 0.1
1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
80 ID, DRAIN CURRENT (A)
20
IAS, AVALANCHE CURRENT(A)
10
TJ = 25oC
60
VGS = 10V
40
Package limited VGS = 4.5V
TJ = 125oC
20
RJC = 3 C/W
o
1 0.01
0.1 1 10 100 tAV, TIME IN AVALANCHE(ms)
1000
0 25 50 75 100
o
125
150
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
100
P(PK), PEAK TRANSIENT POWER (W)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
200
ID, DRAIN CURRENT (A)
100
VGS = 10V
TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ---------------------125
10
1ms
1R DS(ON) LIMITED
SINGLE PULSE TJ = MAX RATED = 135oC/W R
JA
10ms 100ms 1s DC
10
0.1
TA = 25oC
1
SINGLE PULSE
0.01 0.01
0.1
1
10
100
0.5 -3 10
10
-2
10
-1
10
0
10
1
10
2
10
3
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
FDMC8854 Rev.C
4
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FDMC8854 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
NORMALIZED THERMAL IMPEDANCE, ZJA
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.1
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.01
0.004 -3 10
SINGLE PULSE
-2 -1 0 1
10
10
10
10
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDMC8854 Rev.C
5
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FDMC8854 N-Channel PowerTrench(R) MOSFET
FDMC8854 Rev.C
6
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FDMC8854 N-Channel PowerTrench(R) MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I22 FDMC8854 Rev.C
7
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